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Satoshi Hiyamizu (冷水 佐壽, Hiyamizu Satoshi, 25 February 1943[1] - 7 February 2019[2]) was a Japanese professor of electrical engineering.
Dr. Hiyamizu won the 1982 Japanese Journal of Applied Physics Paper Award as lead author of a paper on mobility in two-dimensional electron gases while at Fujitsu Laboratories Limited, received the 1990 IEEE Morris N. Liebmann Memorial Award[1] with Takashi Mimura "for outstanding contributions to the epitaxial growth of compound semiconductor materials and devices," and in 2001 was named an IEEE Fellow[1] "for contributions to the realization of the first high electron mobility transistor (HEMT)". He served as dean of the Osaka University Graduate School of Engineering from 2000 to 2002. He died in February 2019 at the age of 75.[2]
Notes
edit- ^ a b c "講師氏名：冷水佐壽（ひやみず さとし）教授" (in Japanese). Tokushima University. 2002. Archived from the original on March 23, 2019. Retrieved March 23, 2019.
- ^ a b "冷水佐壽氏死去 大阪大名誉教授" (in Japanese). Saga Shimbun. February 13, 2019. Archived from the original on March 23, 2019. Retrieved March 23, 2019.
References
edit- Satoshi Hiyamizu et al., "Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE", Jpn. J. Appl. Phys. Vol.20 (1981) Pt.2 No.4, pp. L245-L248.
- IEEE Morris N. Liebmann Memorial Award recipients
- IEEE Fellow Class of 2001
- IEEE Fellow Class of 2001 (Tokyo section)
- Osaka University Graduate School of Engineering - history